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AOU414 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOU414 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power conversion. Standard Product AOU414 is Pbfree (meets ROHS & Sony 259 specifications). AOU414L is a Green Product ordering option. AOU414 and AOU414L are electrically identical.
TO-251 D
Features
VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 5.7m (VGS = 10V) RDS(ON) < 7.5m (VGS = 4.5V)
Top View Drain Connected to Tab G D S
G S
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH TC=25C Power Dissipation
B C
Maximum 30 20 85 73 200 30 140 100 50 -55 to 175
Units V V A A mJ W C
TC=25C
G
TC=100C B
ID IDM IAR EAR PD TJ, TSTG
TC=100C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Steady-State Steady-State
Symbol RJA RJL
Typ 100 0.7
Max 125 1.5
Units C/W C/W
Alpha & Omega Semiconductor, Ltd.
AOU414
Electrical Characteristics (TJ=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=20A TJ=125C 1.2 200 4.7 6.5 6 85 0.7 5.7 8 7.5 1 85 7000 1.8 Min 30 0.005 1 5 100 2.4 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC 21 21 75 21 38 29 ns ns ns ns ns nC
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time
VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz
6060 638 355 0.45 96.4
0.6 115 55
VGS=4.5V, VDS=15V, ID=20A
46.4 13.6 15.6 15.7 14.2 55.5 14 31 24
VGS=10V, VDS=15V, RL=0.75, RGEN=3
IF=20A, dI/dt=100A/s Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/s
A: The value of R JA is measured with the device in a still air environment with TA =25C. B. The power dissipation P is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper D dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case RJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175C. G. The maximum current rating is limited by bond-wires. Rev2: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AOU414
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60 50 40 ID(A) 30 20 10 0 0 2 3 4 VDS (Volts) Figure 1: On-Region Characteristics 1 5 10V 4.5V 3.5V ID(A) VGS=3V 40 125C 30 20 10 0 1 1.5 2.5 3 3.5 VGS(Volts) Figure 2: Transfer Characteristics 2 4 25C 60 50 VDS=5V
7.0 Normalized On-Resistance 6.5 6.0 RDS(ON) (m) 5.5 5.0 4.5 4.0 3.5 3.0 0 20 40 60 80 100 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 12 VGS=10V VGS=4.5V
1.8 1.6 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 1.0E+01 ID=20A
VGS=4.5V VGS=10V
10 ID=20A RDS(ON) (m) 1.0E+00 IS (A) 125C 1.0E-01 1.0E-02 25C 1.0E-03 1.0E-04 1.0E-05 2 4 6 8 10 0.0 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 0.2 0.4 1.2 125C
8
6
TC=100C TA=25C
25C
4
-55 to 175
2 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AOU414
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 8 VGS (Volts) 6 4 2 0 0 20 40 60 80 100 Qg (nC) Figure 7: Gate-Charge Characteristics VDS=15V ID=20A Capacitance (pF) 8000 7000 6000 5000 4000 3000 Coss 2000 1000 0 0 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 Crss Ciss
1000 RDS(ON) limited 100 ID (Amps) 100s 1ms DC TJ(Max)=175C TA=25C 10s Power (W)
1000 800 600 400 200 0 1E-05 1E-04 0.001 TJ(Max)=175C TA=25C
10
10ms
1
0.1 0.1 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
10 ZJC Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJC.RJC RJC=1.5C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TC=100C TA=25C
0.1 PD
-55 to 175
Ton T Single Pulse
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
AOU414
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100 ID(A), Peak Avalanche Current TA=25C 80 60 40 20 0 0.00001 120 Power Dissipation (W) 100 80 60 40 20 0 0.0001 0.001 0.01 0 25 50 75 100 125 150 175 TCASE (C) Figure 13: Power De-rating (Note B)
tA =
L ID BV - V DD
Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability
100 80 Current rating ID(A) 60 40 20 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 14: Current De-rating (Note B)
Alpha & Omega Semiconductor, Ltd.

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